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| SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 60 50 15 300 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Base-emitter voltage DC current gain Collector-emitter saturation voltage Symbol Testconditons Min 60 50 15 1 0.75 800 2000 0.3 V Typ Max Unit V V V iA V V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ICBO VBE hFE VCB = 50V, IE=0 VCE = 6V , IC = 1mA VCE = 6V , IC = 100mA VCE(sat) IC = 300mA , IB = 30mA Marking Marking ZI- +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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